Technical parameters/forward voltage: | 1.15 V |
|
Technical parameters/reverse recovery time: | 27 ns |
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Technical parameters/Maximum reverse voltage (Vrrm): | 200 V |
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Technical parameters/forward current: | 10000 mA |
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Technical parameters/Maximum forward surge current (Ifsm): | 80 A |
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Technical parameters/maximum reverse leakage current (Ir): | 4 uA, 4 uA |
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Technical parameters/forward voltage (Max): | 1.15 V |
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Technical parameters/forward current (Max): | 10 A |
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Technical parameters/operating temperature (Max): | 175 ℃ |
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Technical parameters/operating temperature (Min): | -65 ℃ |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | TO-252 |
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Dimensions/Length: | 6.73 mm |
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Dimensions/Width: | 6.22 mm |
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Dimensions/Height: | 2.39 mm |
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Dimensions/Packaging: | TO-252 |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Other/Minimum Packaging: | 2000 |
|
Compliant with standards/RoHS standards: |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Vishay Siliconix | 完全替代 | 3 |
VISHAY VS-10CWH02FN-M3 快速/超快二极管, 双共阴极, 200 V, 10 A, 1.15 V, 27 ns, 80 A
|
||
VS-10CWH02FN-M3
|
VISHAY | 完全替代 | TO-252 |
VISHAY VS-10CWH02FN-M3 快速/超快二极管, 双共阴极, 200 V, 10 A, 1.15 V, 27 ns, 80 A
|
||
VS-10CWH02FNTRL-M3
|
VISHAY | 完全替代 | TO-252 |
Diode Switching 200V 10A 3Pin(2+Tab) DPAK T/R
|
||
VS-10CWH02FNTRR-M3
|
Vishay Semiconductor | 完全替代 | TO-252-3 |
Diode Switching 200V 10A 3Pin(2+Tab) DPAK T/R
|
||
VS-10CWH02FNTRR-M3
|
VISHAY | 完全替代 | D-PAK |
Diode Switching 200V 10A 3Pin(2+Tab) DPAK T/R
|
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