Technical parameters/dissipated power: | 1 W |
|
Technical parameters/operating temperature (Max): | 200 ℃ |
|
Technical parameters/operating temperature (Min): | -65 ℃ |
|
Technical parameters/dissipated power (Max): | 1000 mW |
|
Encapsulation parameters/installation method: | Through Hole |
|
Package parameters/number of pins: | 3 |
|
Encapsulation parameters/Encapsulation: | TO-39 |
|
Dimensions/Packaging: | TO-39 |
|
Physical parameters/materials: | Silicon |
|
Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Tray |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
JANTX2N5153L
|
Microsemi | 完全替代 | TO-5 |
PNP功率硅晶体管 PNP POWER SILICON TRANSISTOR
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review