Technical parameters/polarity: | P-Channel |
|
Technical parameters/breakdown voltage of gate source: | 30.0 V |
|
Encapsulation parameters/installation method: | Through Hole |
|
Package parameters/number of pins: | 3 |
|
Encapsulation parameters/Encapsulation: | TO-92 |
|
Dimensions/Height: | 4.7 mm |
|
Dimensions/Packaging: | TO-92 |
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Other/Product Lifecycle: | Obsolete |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
JANTXV2N5116
|
Solitron Devices | 功能相似 |
Trans JFET P-CH
|
|||
JANTXV2N5116
|
Microsemi | 功能相似 | TO-18 |
Trans JFET P-CH
|
||
|
|
Philips | 功能相似 |
P-channel silicon field-effect transistors
|
|||
PMBFJ177
|
NXP | 功能相似 | SOT-23-3 |
P-channel silicon field-effect transistors
|
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