Technical parameters/drain source resistance: | 65.0 mΩ |
|
Technical parameters/polarity: | P-Channel |
|
Technical parameters/dissipated power: | 1.30 W |
|
Technical parameters/drain source voltage (Vds): | 20 V |
|
Technical parameters/breakdown voltage of gate source: | ±12.0 V |
|
Technical parameters/Continuous drain current (Ids): | -3.60 A to 3.60 A |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Encapsulation parameters/Encapsulation: | Chip |
|
Dimensions/Packaging: | Chip |
|
Other/Packaging Methods: | Tape & Reel (TR) |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual |
|---|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review