Technical parameters/polarity: | NPN |
|
Technical parameters/breakdown voltage (collector emitter): | 100 V |
|
Technical parameters/Maximum allowable collector current: | 8A |
|
Encapsulation parameters/installation method: | Through Hole |
|
Encapsulation parameters/Encapsulation: | TO-220 |
|
Dimensions/Packaging: | TO-220 |
|
Other/Product Lifecycle: | End of Life |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
NXP | 功能相似 | TO-220 |
硅扩散型功率晶体管 Silicon Diffused Power Transistor
|
||
KSD560
|
ON Semiconductor | 功能相似 |
低频功率放大器 Low Frequency Power Amplifier
|
|||
KSD560
|
Fairchild | 功能相似 | TO-220 |
低频功率放大器 Low Frequency Power Amplifier
|
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