Technical parameters/polarity: | NPN |
|
Technical parameters/breakdown voltage (collector emitter): | 28 V |
|
Technical parameters/Maximum allowable collector current: | 25A |
|
Other/Product Lifecycle: | Active |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
CBSL150
|
Advanced Semiconductor | 功能相似 |
RF Power Bipolar Transistor, 1Element, Ultra High Frequency Band, Silicon, NPN, 0.4INCH, FM-2
|
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