Technical parameters/polarity: | PNP |
|
Technical parameters/breakdown voltage (collector emitter): | 50 V |
|
Technical parameters/Maximum allowable collector current: | 0.15A |
|
Encapsulation parameters/Encapsulation: | UMT |
|
Dimensions/Packaging: | UMT |
|
Other/Product Lifecycle: | Obsolete |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BC857S
|
ON Semiconductor | 功能相似 | SC-70-6 |
Surface mount Si-Epitaxial PlanarTransistors
|
||
UMT1NTN
|
ROHM Semiconductor | 类似代替 | SC-70-6 |
ROHM UMT1NTN 双极晶体管阵列, 混合式, PNP, -50 V, 150 mW, -150 mA, 120 hFE, SC-88
|
||
UMT1NTN
|
Ricoh | 类似代替 | SC-88 |
ROHM UMT1NTN 双极晶体管阵列, 混合式, PNP, -50 V, 150 mW, -150 mA, 120 hFE, SC-88
|
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