Technical parameters/dissipated power (Max): | 360 mW |
|
Encapsulation parameters/installation method: | Through Hole |
|
Package parameters/number of pins: | 3 |
|
Encapsulation parameters/Encapsulation: | TO-18 |
|
Dimensions/Packaging: | TO-18 |
|
Other/Product Lifecycle: | Active |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N3965
|
ON Semiconductor | 功能相似 |
TRANSISTOR,BJT,PNP,60V V(BR)CEO,200MA I(C),TO-18
|
|||
BCY70
|
Central Semiconductor | 功能相似 |
Trans GP BJT PNP 40V 0.2A 3Pin TO-18
|
|||
BCY70
|
Comset Semiconductors | 功能相似 |
Trans GP BJT PNP 40V 0.2A 3Pin TO-18
|
|||
BCY70
|
Philips | 功能相似 | TO-18 |
Trans GP BJT PNP 40V 0.2A 3Pin TO-18
|
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