Technical parameters/power supply voltage (DC): | 2.70V (min) |
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Technical parameters/number of pins: | 28 |
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Technical parameters/access time: | 55 ns |
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Technical parameters/memory capacity: | 32000 B |
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Technical parameters/operating temperature (Max): | 85 ℃ |
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Technical parameters/operating temperature (Min): | -40 ℃ |
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Technical parameters/power supply voltage: | 2.7V ~ 5.5V |
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Technical parameters/power supply voltage (Max): | 5.5 V |
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Technical parameters/power supply voltage (Min): | 2.7 V |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 28 |
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Encapsulation parameters/Encapsulation: | SOIC |
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Dimensions/Packaging: | SOIC |
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Physical parameters/operating temperature: | -40℃ ~ 85℃ |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Each |
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Other/Manufacturing Applications: | Embedded Design & Development, Embedded Design and Development |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with the REACH SVHC standard: | No SVHC |
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Compliant with standard/REACH SVHC version: | 2015/06/15 |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BS62LV256SC-70
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BSI | 功能相似 | SOIC |
BSI (BRILLIANCE SEMICONDUCTOR) BS62LV256SC-70 芯片, 存储器, SRAM, CMOS, 256K, 62LV256, SOIC28
|
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