Technical parameters/polarity: | NPN |
|
Technical parameters/breakdown voltage (collector emitter): | 45 V |
|
Technical parameters/Maximum allowable collector current: | 100mA |
|
Technical parameters/minimum current amplification factor (hFE): | 200 |
|
Technical parameters/maximum current amplification factor (hFE): | 450 |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Encapsulation parameters/Encapsulation: | SOT-23-3 |
|
Dimensions/Packaging: | SOT-23-3 |
|
Other/Product Lifecycle: | Unknown |
|
Other/Minimum Packaging: | 3000 |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BC847B-7-F
|
Diodes | 功能相似 | SOT-23-3 |
BC847B 系列 NPN 45 V 300 mW 小信号 晶体管 表面贴装 -SOT-23-3
|
||
BC847BLT1G
|
LiteOn | 功能相似 | SOT-23-3 |
ON SEMICONDUCTOR BC847BLT1G. 单晶体管 双极, 通用, NPN, 45 V, 100 MHz, 300 mW, 100 mA, 450 hFE
|
||
BC847BLT1G
|
ON Semiconductor | 功能相似 | SOT-23-3 |
ON SEMICONDUCTOR BC847BLT1G. 单晶体管 双极, 通用, NPN, 45 V, 100 MHz, 300 mW, 100 mA, 450 hFE
|
||
BC847BLT3G
|
ON Semiconductor | 功能相似 | SOT-23-3 |
ON SEMICONDUCTOR BC847BLT3G 新
|
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