Technical parameters/polarity: | P-CH |
|
Technical parameters/drain source voltage (Vds): | 30 V |
|
Technical parameters/Continuous drain current (Ids): | 60A |
|
Encapsulation parameters/Encapsulation: | TO-263 |
|
Dimensions/Packaging: | TO-263 |
|
Other/Product Lifecycle: | Obsolete |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
RF1S60P03SM
|
Fairchild | 功能相似 | TO-263 |
60A , 30V ,额定雪崩, P沟道增强型功率MOSFET 60A, 30V, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs
|
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