Technical parameters/drain source resistance: | 39 mΩ |
|
Technical parameters/polarity: | P-CH |
|
Technical parameters/dissipated power: | 1.6 W |
|
Technical parameters/threshold voltage: | -1.4V |
|
Technical parameters/drain source voltage (Vds): | -20V |
|
Technical parameters/Continuous drain current (Ids): | -6A |
|
Encapsulation parameters/Encapsulation: | CPH-6 |
|
Dimensions/Packaging: | CPH-6 |
|
Other/Product Lifecycle: | Active |
|
Other/Minimum Packaging: | 3000 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
CPH6347-TL-H
|
ON Semiconductor | 功能相似 | TSOT-23-6 |
P 通道功率 MOSFET,20V,ON Semiconductor
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review