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Description Infineon OptiMOS™ 功率 MOSFET 系列 OptiMOS™ 产品提供高性能封装,可处理最具挑战性的应用,在有限空间提供全部灵活性。 这些 Infineon 产品经的设计符合并超过计算机应用中更严格的下一代电压调节标准的能效和功率密度要求。 N 通道 - 增强模式 符合汽车 AEC Q101 规格 MSL1 高达 260°C 峰值回流焊接 175°C 工作温度 绿色封装(无铅) 超低 Rds(on) ### MOSFET 晶体管,Infineon Infineon 庞大且全面的 MOSFET 设备组合包括 OptiMOS™ 与 CoolMOS™ 系列。 这些产品提供最新一代最先进功率 MOSFET 中的顶级性能
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Brand: Infineon
Packaging WDSON
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
15.34  yuan 15.34yuan
5+:
$ 17.9478
50+:
$ 17.1808
200+:
$ 16.7513
500+:
$ 16.6439
1000+:
$ 16.5365
2500+:
$ 16.4138
5000+:
$ 16.3371
7500+:
$ 16.2604
Quantity
5+
50+
200+
500+
1000+
Price
$17.9478
$17.1808
$16.7513
$16.6439
$16.5365
Price $ 17.9478 $ 17.1808 $ 16.7513 $ 16.6439 $ 16.5365
Start batch production 5+ 50+ 200+ 500+ 1000+
  • Freight charges   In stock Freight rate:$13.00
  • Quantity
    Inventory(6296) Minimum order quantity(5)
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Technical parameters/polarity:

N-Channel

 

Technical parameters/rise time:

10 ns

 

Technical parameters/Input capacitance (Ciss):

2100pF @75V(Vds)

 

Technical parameters/descent time:

7 ns

 

Technical parameters/operating temperature (Max):

150 ℃

 

Technical parameters/operating temperature (Min):

-40 ℃

 

Technical parameters/dissipated power (Max):

78 W

 

Encapsulation parameters/installation method:

Surface Mount

 

Package parameters/number of pins:

7

 

Encapsulation parameters/Encapsulation:

WDSON

 

Dimensions/Length:

6.35 mm

 

Dimensions/Width:

5.05 mm

 

Dimensions/Height:

0.53 mm

 

Dimensions/Packaging:

WDSON

 

Physical parameters/operating temperature:

-40℃ ~ 150℃

 

Other/Product Lifecycle:

Active

 

Other/Packaging Methods:

Tape & Reel (TR)

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standards:

Lead Free

 

Compliant with the REACH SVHC standard:

No SVHC

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
BSB165N15NZ3GXUMA1 BSB165N15NZ3GXUMA1 Infineon 功能相似 WDSON-2-3
INFINEON BSB165N15NZ3GXUMA1 晶体管, MOSFET, N沟道, 45 A, 150 V, 0.0131 ohm, 10 V, 3 V
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