Technical parameters/number of pins: | 3 |
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Technical parameters/drain source resistance: | 0.2 Ω |
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Technical parameters/polarity: | N-Channel |
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Technical parameters/dissipated power: | 450 mW |
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Technical parameters/threshold voltage: | 1.2 V |
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Technical parameters/drain source voltage (Vds): | 20 V |
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Technical parameters/Leakage source breakdown voltage: | 20.0 V |
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Technical parameters/breakdown voltage of gate source: | ±6.00 V |
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Technical parameters/Continuous drain current (Ids): | 890 mA |
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Technical parameters/rise time: | 4.8 ns |
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Technical parameters/Input capacitance (Ciss): | 120pF @16V(Vds) |
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Technical parameters/rated power (Max): | 310 mW |
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Technical parameters/descent time: | 7.4 ns |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/dissipated power (Max): | 310mW (Ta) |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | SOT-723-3 |
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Dimensions/Packaging: | SOT-723-3 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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Compliant with standard/REACH SVHC version: | 2015/12/17 |
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Customs information/ECCN code: | EAR99 |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
NTK3134NT1G
|
ON Semiconductor | 完全替代 | SOT-723-3 |
ON SEMICONDUCTOR NTK3134NT1G 晶体管, MOSFET, N沟道, 890 mA, 20 V, 0.2 ohm, 4.5 V, 1.2 V
|
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