Technical parameters/polarity: | Dual N-Channel |
|
Technical parameters/drain source voltage (Vds): | 12 V |
|
Technical parameters/Continuous drain current (Ids): | 11.8 A |
|
Technical parameters/rise time: | 50 ns |
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Technical parameters/rated power (Max): | 1.4 W |
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Technical parameters/descent time: | 25 ns |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 3500 mW |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 8 |
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Encapsulation parameters/Encapsulation: | PowerPAK |
|
Dimensions/Packaging: | PowerPAK |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
|
Other/Packaging Methods: | Tape & Reel (TR) |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI7234DP-T1-GE3
|
VISHAY | 类似代替 | SO-8 |
Trans MOSFET N-CH 12V 24.8A 8Pin PowerPAK SO T/R
|
||
SI7234DP-T1-GE3
|
Vishay Siliconix | 类似代替 | SO-8 |
Trans MOSFET N-CH 12V 24.8A 8Pin PowerPAK SO T/R
|
||
SI7940DP-T1-E3
|
Vishay Siliconix | 完全替代 | SO-8 |
MOSFET 2N-CH 12V 7.6A 8SOIC
|
||
SI7940DP-T1-E3
|
Vishay Semiconductor | 完全替代 |
MOSFET 2N-CH 12V 7.6A 8SOIC
|
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