Recently, Infineon publicly showcased the first fully processed 300mm silicon carbide (SiC) wafer at the electronica trade fair in Munich. At its Villach, Austria plant, Infineon successfully processed 300mm SiC wafers into functional power devices, becoming the world's first company to achieve this milestone in a large-scale semiconductor fab environment, using existing silicon manufacturing equipment.
Compared with 200mm wafers, 300mm wafers offer more advanced chip production technology and much higher efficiency—thanks to the larger diameter, die output per wafer reaches 2.3x that of 200mm. CEO Jochen Hanebeck said this technology milestone further strengthens Infineon's lead in power systems; staying ahead in power semiconductors means continuously pushing technology higher, and with silicon, gallium nitride, and now 300mm SiC, the company leads in scaling semiconductor manufacturing and driving profitable growth.
The milestone shows the potential for full-scale SiC production on 300mm wafers. Infineon will work closely with customers and partners to plan the 300mm SiC technology roadmap and capacity ramp, while continuing its existing 200mm SiC roadmap. SiC, with lower power losses, higher power density, and efficient high-voltage/high-temperature operation, is widely used in traction inverters, on-board chargers, EV charging piles, large energy storage systems, industrial drives, and UPS. AI data center demand for SiC is also growing, expanding into solid-state transformers, solid-state circuit breakers, and power supply units, served by Infineon's CoolSiC portfolio.
Meanwhile, Infineon validated cold split technology for 300mm SiC wafers at its Dresden plant. Versus traditional wire saw cutting, cold split separates wafers from the SiC ingot with less material loss and much shorter processing time, yielding more wafers per ingot at lower capex. Together, these advances let Infineon scale SiC production with market demand.
Infineon produces products using silicon, SiC, and GaN. On October 27, 2026, it announced about €1.1 billion to build a 300mm GaN power semiconductor mass production base in Villach. The SiC achievement extends this model to a second wide-bandgap material.
ICgoodFind Summary: Infineon processed 300mm SiC wafers into functional power devices, with 2.3x die output per wafer versus 200mm, using existing silicon equipment—meaning SiC scaling can reuse mature silicon line experience. Cold split validation further cuts material loss at the ingot level. Together, these point to a falling SiC cost curve, while AI data center demand for solid-state transformers and power supply units is becoming a new growth scenario.
