China's new energy vehicle (NEV) industry continues to grow rapidly, with intelligent cockpit and ADAS features becoming more common. The electrical/electronic (E/E) architecture is now critical to vehicle safety and reliability. To ensure reliable domain controller operation, power circuits and redundancy systems need high-performance devices for supply monitoring, logic control, and driver management. Infineon has released the 2EDN1153DAA and 2EDN1132DAA, a new generation of independent dual high-side MOS drivers for 12V automotive domain control, meeting ISO 26262 functional safety standards and supporting advanced autonomous driving hardware.
The chips feature an SPI interface, support bidirectional current sensing, NTC temperature monitoring, and low-power modes, and can capture analog signals including Tj, Vbat, Vout, Vsense, and Vds. They offer capacitive charging and external MOSFET reliability detection, plus built-in programmable NVM memory and a safe-available mode. The package is PG-TSDSO-32-1. Applications include supply protection, battery protection, and power distribution isolation and protection.
Protection features cover battery undervoltage shutdown, overvoltage protection, and gate overvoltage protection. Short-circuit protection supports both hardware and software configurations, and the chips integrate wiring harness protection, load protection, chip overtemperature shutdown, and reverse polarity protection. In 12V automotive systems, they provide dual-channel high-side MOS driving and multi-dimensional monitoring of Vs, charge pump, gate, source, and drain voltages, with flexible protection thresholds for optimized system design.
Development resources include datasheets, safety manuals, evaluation boards, configuration GUI software, and simulation models for fast design and validation.
ICgoodFind: Infineon's ASIL-D dual high-side MOS drivers expand 12V automotive domain control power protection options, supporting NEV E/E architecture upgrades.
