Samsung has shipped the industry’s first 12‑stack HBM4E memory samples, delivering 48GB per stack. The new generation offers over 30% higher capacity than HBM4, pin speeds of 14Gbps (extendable to 16Gbps), and aggregate bandwidth of 3.6TB/s. It also achieves 16% energy efficiency improvement and 14% thermal resistance reduction.
Compared to HBM4, overall performance improves by more than 20% .
Samsung will now work with customers on validation and optimization, with mass production to follow. The product roadmap includes 8‑stack (32GB) and 16‑stack (64GB) versions for edge AI and cloud supercomputing use cases.
By delivering HBM4E ahead of the curve, Samsung strengthens its high‑bandwidth memory leadership and provides a critical performance upgrade for Nvidia and other AI chip vendors.
ICgoodFind: Samsung’s 12‑stack HBM4E leap boosts capacity, bandwidth, and efficiency – a key enabler for next‑gen AI compute infrastructure.
