Two of China's leading memory chip manufacturers, ChangXin Memory Technologies (CXMT) and Yangtze Memory Technologies Co. (YMTC), have simultaneously initiated their largest-ever capacity expansion plans. This aggressive push aims to close the gap with global leaders like Samsung and SK Hynix.
As China's primary DRAM producer, CXMT is taking particularly bold steps, constructing a massive new fab in Shanghai. This facility is projected to have a capacity two to three times larger than its Hefei headquarters base. Targeting production in 2027, it will focus on high-end chips for servers, PCs, and automotive electronics.
In a strategic move to capture AI-driven demand, CXMT is also establishing an HBM production line in Shanghai. Its HBM3 product, developed on a 17nm node, is already in the sampling phase with major domestic clients, challenging the dominant overseas suppliers.
Meanwhile, YMTC is building its third fab in Wuhan, also slated for 2027 production. Notably, this new facility will be equipped 100% with domestically produced semiconductor tools. Beyond NAND flash, 50% of its capacity will be allocated to DRAM production, with plans to develop HBM for AI computing in collaboration with local packaging partners.
ICgoodFind : This coordinated expansion by China's memory giants strategically targets AI and high-performance market gaps. It marks a critical phase in import substitution and is poised to reshape the competitive dynamics of the global memory landscape.
