onsemi has announced the release of its new vertical Gallium Nitride (vGaN) power semiconductor. Utilizing a proprietary GaN-on-GaN substrate technology, the chip enables current to flow vertically, achieving a breakthrough of nearly 50% lower energy loss compared to conventional solutions.
The single-chip architecture is about one-third the size of commercial lateral GaN devices. Its higher switching frequency also allows passive components like capacitors and inductors to be reduced in size by half, significantly improving system integration and cost-efficiency. The company is now sampling 700V and 1200V versions to early customers, with the technology protected by over 130 global patents. It is poised to enhance performance in AI data centers, electric vehicles, and renewable energy.
ICgoodFind : onsemi's vGaN breakthrough redefines power semiconductor performance, accelerating energy efficiency upgrades across multiple high-power industries.
