Model/Brand/Package
Category/Description
Inventory
Price
Data
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Category: IGBTtransistorDescription: 600V Non Punch Through, Short Circuit Rated IGBT in a D-Pak package.2235 -
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Category: IGBTtransistorDescription: 6500V IHV 130mm Diode Module with EC3 - Diode - The best solution for your traction and industry applications. Predestined to be combined with IGBT3 products.3524 -
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Category: IGBTtransistorDescription: Trans IGBT Chip N-CH 1500V 40A 200000mW 3Pin(3+Tab) TO-264 Rail3780 -
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Category: IGBTtransistorDescription: Trans IGBT Chip N-CH 600V 35A 3Pin(3+Tab) TO-254AA68041+$1050.490610+$1013.631350+$1009.0239100+$1004.4165150+$997.0446250+$990.5942500+$984.14381000+$976.7720 -
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Category: IGBTtransistorDescription: Trans IGBT Chip N-CH 300V 110A 3Pin(3+Tab) TO-220AB24181+$49.991910+$47.1236100+$44.9927250+$44.6649500+$44.33711000+$43.96832500+$43.64055000+$43.4356 -
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Category: IGBTtransistorDescription: SEMIKRON SKM 400GA173D IGBT Array & Module Transistor, N Channel, 440A, 1.7kV, 1.7kV, SEMITRANS 431491+$2931.483510+$2904.833725+$2891.508750+$2878.1838100+$2864.8589150+$2851.5340250+$2838.2090500+$2824.8841 -
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Category: IGBTtransistorDescription: IGBT, POW, QUAD WITH NTC, 600V, 50A; Module Configuration: Quad; Transistor Polarity: N Channel; DC Collector Current...72191+$341.374110+$332.468650+$325.6412100+$323.2664200+$321.4853500+$319.11051000+$317.62632000+$316.1421 -
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Category: IGBTtransistorDescription: INFINEON IKW40N65F5 Single transistor, IGBT, 40 A, 1.6 V, 255 W, 650 V, TO-247, 3 pins64905+$21.498850+$20.5800200+$20.0655500+$19.93691000+$19.80832500+$19.66135000+$19.56947500+$19.4775 -
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Category: IGBTtransistorDescription: Single transistor, IGBT, 60 A, 1.6 V, 214 W, 600 V, TO-247AD, 3 pins90691+$49.954110+$47.0879100+$44.9587250+$44.6311500+$44.30361000+$43.93512500+$43.60755000+$43.4028 -
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Category: IGBTtransistorDescription: FAIRCHILD SEMICONDUCTOR FGD5T120SH Single transistor, IGBT, FS trench, 10A, 2.9 V, 69 W, 1.2 kV, TO-252, 3-pin new33875+$4.676425+$4.330050+$4.0875100+$3.9836500+$3.91432500+$3.82775000+$3.793110000+$3.7411 -
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Category: IGBTtransistorDescription: LITTELFUSE MG12150D-BA1MM IGBT Array & Module Transistor, Dual NPN, 210A, 1.8V, 1.1kW, 1.2kV, Module82181+$853.659410+$823.706450+$819.9623100+$816.2182150+$810.2276250+$804.9858500+$799.74401000+$793.7534 -
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Category: IGBTtransistorDescription: IGBT Transistor DISC IGBT XPT-GENX327161+$53.344510+$50.2838100+$48.0101250+$47.6603500+$47.31051000+$46.91692500+$46.56715000+$46.3485 -
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Category: IGBTtransistorDescription: IGBT Transistors44411+$246.125310+$239.704650+$234.7821100+$233.0700200+$231.7858500+$230.07371000+$229.00352000+$227.9334 -
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Category: IGBTtransistorDescription: IGBT Discrete components, IXYS XPT series XPT of IXYS ™ The series of discrete IGBT components adopts ultra light through-hole thin chip technology, which can reduce thermal resistance and energy loss. These devices provide fast switching time, low tail line current, and offer various industry standards and proprietary packaging. High power density and low VCE (sat) square reverse bias safe working area (RBSOA) up to rated breakdown voltage short-circuit capacity, ensuring a forward on voltage temperature coefficient of 10usec optional Co Pack Sonic FRD ™ Or HiPerFRED ™ International standards for diodes and proprietary high-voltage packaging # # IGBT discrete components and modules, IXYS insulated gate bipolar transistor or IGBT is a three terminal power semiconductor device known for its high efficiency and fast switching. IGBT combines the simple gate driving characteristics of MOSFETs with the high current and low saturation voltage capabilities of bipolar transistors by combining isolated gate FETs used for input control and bipolar power transistors used as switches in a single device.79521+$86.360410+$82.6056100+$81.9297250+$81.4041500+$80.57801000+$80.20252500+$79.67695000+$79.2263 -
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Category: IGBTtransistorDescription: Igbt 650V 50A 230W To247ad56005+$25.834850+$24.7307200+$24.1125500+$23.95791000+$23.80332500+$23.62675000+$23.51637500+$23.4059 -
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Category: IGBTtransistorDescription: IGBT Discrete components, IXYS XPT series XPT of IXYS ™ The series of discrete IGBT components adopts ultra light through-hole thin chip technology, which can reduce thermal resistance and energy loss. These devices provide fast switching time, low tail line current, and offer various industry standards and proprietary packaging. High power density and low VCE (sat) square reverse bias safe working area (RBSOA) up to rated breakdown voltage short-circuit capacity, ensuring a forward on voltage temperature coefficient of 10usec optional Co Pack Sonic FRD ™ Or HiPerFRED ™ International standards for diodes and proprietary high-voltage packaging # # IGBT discrete components and modules, IXYS insulated gate bipolar transistor or IGBT is a three terminal power semiconductor device known for its high efficiency and fast switching. IGBT combines the simple gate driving characteristics of MOSFETs with the high current and low saturation voltage capabilities of bipolar transistors by combining isolated gate FETs used for input control and bipolar power transistors used as switches in a single device.92621+$159.227910+$155.074150+$151.8895100+$150.7819200+$149.9511500+$148.84341000+$148.15112000+$147.4588 -
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Category: IGBTtransistorDescription: Trans IGBT Chip N-CH 600V 55A 3Pin(2+Tab) TO-26820601+$55.514910+$52.3296100+$49.9634250+$49.5994500+$49.23531000+$48.82582500+$48.46185000+$48.2342 -
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Category: IGBTtransistorDescription: Igbt 200A 1600V Sot-227B67121+$344.603310+$335.613650+$328.7215100+$326.3243200+$324.5264500+$322.12911000+$320.63092000+$319.1326 -
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Category: IGBTtransistorDescription: IGBT Discrete components, IXYS XPT series XPT of IXYS ™ The series of discrete IGBT components adopts ultra light through-hole thin chip technology, which can reduce thermal resistance and energy loss. These devices provide fast switching time, low tail line current, and offer various industry standards and proprietary packaging. High power density and low VCE (sat) square reverse bias safe working area (RBSOA) up to rated breakdown voltage short-circuit capacity, ensuring a forward on voltage temperature coefficient of 10usec optional Co Pack Sonic FRD ™ Or HiPerFRED ™ International standards for diodes and proprietary high-voltage packaging # # IGBT discrete components and modules, IXYS insulated gate bipolar transistor or IGBT is a three terminal power semiconductor device known for its high efficiency and fast switching. IGBT combines the simple gate driving characteristics of MOSFETs with the high current and low saturation voltage capabilities of bipolar transistors by combining isolated gate FETs used for input control and bipolar power transistors used as switches in a single device.65581+$49.145310+$46.3255100+$44.2307250+$43.9085500+$43.58621000+$43.22372500+$42.90145000+$42.7000 -
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Category: IGBTtransistorDescription: Igbt 650V 130A 600W To22092541+$38.566610+$36.3538100+$34.7100250+$34.4571500+$34.20421000+$33.91972500+$33.66685000+$33.5087 -
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Category: IGBTtransistorDescription: Trans IGBT Chip N-CH 900V 105A 600000mW 3Pin(3+Tab) TO-247AD99121+$48.629210+$45.8390100+$43.7663250+$43.4474500+$43.12851000+$42.76982500+$42.45095000+$42.2516 -
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Category: IGBTtransistorDescription: Trans IGBT Chip N-CH 900V 90A 500000mW 3Pin(3+Tab) TO-247AD52741+$54.891510+$51.7420100+$49.4023250+$49.0424500+$48.68241000+$48.27752500+$47.91755000+$47.6926
