Samsung Electronics has unveiled a groundbreaking GDDR7 memory chip, achieving a remarkable data transfer rate of 40 gigabits per second (Gbps). This 3GB (24Gb) memory module was honored with a Presidential Award at the 2025 Korea Tech Festival in Seoul, highlighting its significance as a major technological advancement.
The exceptional speed is enabled by several key innovations. The chip is manufactured using Samsung's advanced 12nm DRAM process and employs PAM3 (Pulse Amplitude Modulation 3) signaling. Unlike traditional binary methods, PAM3 uses three signal levels to transmit 50% more data per clock cycle. This design also incorporates power-gating technology, improving power efficiency by over 30% compared to the previous generation, making it ideal for next-generation AI accelerators and high-end graphics cards.
While showcasing this 40Gbps sample, Samsung is also reportedly mass-producing a 28Gbps version of the 3GB GDDR7 module. This more readily available version is widely expected to be featured in upcoming consumer GPUs, such as NVIDIA's anticipated RTX 50 Super series, balancing cutting-edge performance with supply chain stability for mass-market adoption.
The competition in the high-speed memory market is intensifying. Rival SK Hynix is preparing to introduce its own 24Gb GDDR7 solution, which utilizes a symmetrical dual-channel design to potentially boost bandwidth. This sets the stage for GDDR7 to become the dominant memory standard for AI inference and high-resolution gaming, filling the performance gap between GDDR6 and more expensive HBM (High Bandwidth Memory).
ICgoodFind's：Samsung's award-winning 40Gbps GDDR7 prototype pushes the boundaries of memory speed and efficiency. The ensuing competition with SK Hynix will accelerate innovation, providing a crucial performance boost for the next wave of AI and graphics hardware.
