Gallium Nitride Power Devices: Focus on Nexperia's Low-Voltage Solutions

Gallium nitride (GaN) power devices find extensive applications in both high-voltage and low-voltage scenarios. High-voltage GaN is primarily used in the primary side of mains-powered switch-mode power supplies to provide stable DC voltage to the secondary side. Low-voltage GaN, on the other hand, is widely applied in fast-charging secondary sides, car chargers, and smartphone charge pumps. Replacing traditional silicon MOS devices in the secondary side of PD fast chargers with low-voltage GaN can further reduce secondary synchronous rectification losses. Additionally, its high switching frequency enables smaller magnetic components, facilitating ultra-thin and compact designs.

Nexperia has launched a series of low-voltage GaN power devices in WLCSP, VQFN, and LGA small packages, ideal for space-constrained power products.

40V Low-Voltage GaN Devices

• GANB012-040CBA: 40V, 12mΩ, normally-off enhancement-mode device in WLCSP package. It is bidirectional, featuring ultra-high switching speed, ultra-low on-resistance, and compliance with RoHS, lead-free, and REACH standards, suitable for high-efficiency and high-power-density applications.
• GANB1R2-040QBA: 40V, 1.2mΩ, normally-off enhancement-mode device in ultra-thin leadless VQFN package. It shares the same bidirectional capability, ultra-high switching speed, and ultra-low on-resistance, meeting RoHS, lead-free, and REACH standards for high-efficiency and high-power-density scenarios.
• GANB4R8-040CBA & GANB8R0-040CBA: 40V devices with 4.8mΩ and 8mΩ on-resistance respectively, both in WLCSP package. They offer bidirectional operation, ultra-high switching speed, and ultra-low on-resistance, compliant with RoHS, lead-free, and REACH standards.

These 40V devices are suitable for high-side load switches, overvoltage protection in smartphone USB ports, power switch circuits, and standby power systems.

100~150V Low-Voltage GaN Devices

• GANE7R0-100CBA & GANE2R7-100CBA: 100V devices with 7mΩ and 2.7mΩ on-resistance in WLCSP package, featuring high-frequency switching, low gate charge, low output charge, no body diode, and compliance with RoHS and REACH standards.
• GAN3R2-100CBE: 100V, 3.2mΩ device in WLCSP package, with high-frequency switching, low gate/output charge, no body diode, built-in ESD protection, and RoHS/REACH compliance.
• GANE1R8-100QBA: 100V, 1.8mΩ device in leadless ultra-thin VQFN package, offering high-frequency switching, low gate/output charge, no body diode, and RoHS/REACH compliance.
• GAN7R0-150LBE: 150V, 7mΩ device in LGA package, with high-frequency switching, low gate/output charge, no body diode, built-in ESD protection, and RoHS/REACH compliance.

Nexperia

These 100~150V devices are versatile, suitable for high-power-density and high-efficiency power conversion, secondary synchronous rectification, 48V system high-frequency DC-DC converters, fast charging, communication power supplies, motor drives, non-automotive LiDAR, and Class D audio amplifiers.

ICgoodFind Summary

Nexperia's new low-voltage GaN power devices, with their high-frequency switching, low gate charge, and low output charge, excel in high-power-density and high-efficiency power conversion. Compared to traditional low-voltage silicon MOS, they offer better efficiency, improve circuit conversion efficiency, reduce product size, and provide superior options for low-voltage applications such as fast-charging secondary sides, car chargers, smartphone charge pumps, communication power conversion, motor drives, and circuit protection, driving power technology toward miniaturization, high efficiency, and high performance.