Marking Code Search
Marking Code Search
Model inquiry silk-screen printing
| Model | Silk-screen printing code | Manufacturer | Encapsulation | Number of pins | Description | Data manual |
|---|---|---|---|---|---|---|
| ETC1810-10U | NB | Etc | SOT-23 |
3
|
4.37V, -Reset PPO
|
|
| RTGN131AP | NB | SOT-89 |
3
|
NPN transistor with Resistor built-in
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| DF2B6.8M1ACT | NB | 1-1P1S |
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Extra-High-Speed Bidirectional ESD Protection Diode
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| MIC1810-10U | NB | Mcr | SOT-23 |
3
|
4.37V, -Reset PPO
|
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MIC1810-10UY
|
NB | Mcr | SOT-23 |
3
|
4.37V, -Reset PPO
|
|
| DRC9114E | NB | SSMini3-F3-B |
3
|
Silicon NPN epitaxial planar type transistor with R
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| DRCF114E | NB | ML3-N4-B |
4
|
Silicon NPN epitaxial planar type transistor with R
|
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2SCR523MT2L
|
NB | VMT3 |
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General purpose NPN transistor (50V,0.1A)
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| R5323N010B | NB | Ric | SOT-23-6 |
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LDO, Dual out, sep. +CE, Vo1=2.6V, Vo2=2.6V, 150mA
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| 2SCR523EBTL | NB | SC-89 |
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General purpose NPN transistor (50V,0.1A)
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| 2SCR523UBTL | NB | UMT3F |
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General purpose NPN transistor (50V,0.1A)
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| 2SCR523EB | NB | EMT3F |
3
|
General purpose NPN transistor (50V,0.1A)
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| 2SCR523UB | NB | UMT3F |
3
|
General purpose NPN transistor (50V,0.1A)
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| 2SCR512P | NB | MPT3 |
3
|
Medium Power NPN Transistor (30V / 2A)
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| 2SCR512PT100 | NB | MPT3 |
|
Medium Power NPN Transistor (30V / 2A)
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| 2SCR523M | NB | VMT3 |
3
|
General purpose NPN transistor (50V,0.1A)
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| KRC652U | NB | USV |
5
|
General Purpose Transistor with Built in Bias Resistor
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| RT1N231U | NB | MITSUBISHI | SOT-523 |
|
三极管Bipolar Junction Transistors(BJT) 带阻尼NPNNPN Bipolar Digital Transistor (BRT)
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| BD52E40G-MTR | Nb | SOT23-5 |
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Voltage Detector with Adjustable Delay Time
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| BD52E40G-TR | Nb | SOT23-5 |
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Voltage Detector with Adjustable Delay Time
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TV02W800B-G
|
NB | Cmc | SOD-123 |
2
|
Vrwm=80V, Vbr=88.8..97.6V, Ipp=1.55A, 200W(1ms), Bidirectional
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| KRC642T | NB | TSV |
5
|
General Purpose Transistor with Built in Bias Resistor
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| PT7M6247CLC3 | nb | Pti | SC-70 |
3
|
4.7V±1.5%, -Reset PPO
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| XC6127C18DNR | NB | Torex | SSOT-24 |
4
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1.8V±0.8%, -Reset PPO, -MR, Rt=400ms
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| XC6366D105MR | NB | TOREX | SOT-153/SOT-25/SOT23-5 |
|
电源管理ICPower Management IC/PMIC DC/DC降压转换器DC/DC Step-Down Converter
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| R1118K301B | NB | Ric | DFN1612-4B |
4
|
3V±1%, 150mA, +CE
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| KRC842T | NB | TS6 |
6
|
General Purpose Transistor with Built in Bias Resistor
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PESD1CAN-U
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NB | NXP | SOT323 |
3
|
Low capacitance bidirectional ESD protection diodes
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| PT7M6247CLC3E | nb | Pti | SC-70 |
3
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4.7V±1.5%, -Reset PPO, Lead free
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| PT7M6247CLC4 | nb | Pti | SC-70-4 |
4
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4.7V±1.5%, -Reset PPO
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| PT7M6247CLC4E | nb | Pti | SC-70-4 |
4
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4.7V±1.5%, -Reset PPO, Lead free
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| PT7M6247CLTA3 | nb | Pti | SOT-23 |
3
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4.7V±1.5%, -Reset PPO
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| CHTA42LPT | NB | Chm | SOT-23 |
3
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Vid, 300V, 500mA, B>40, 50MHz
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| DRC4114E | NB | NS-B1-B |
3
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Silicon NPN epitaxial planar type transistor with R
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| BF599 | NB | Sie | SOT-23 |
3
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VHF, IF, 40V, 25mA, 200mW, B>40, 550MHz
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| RN1443 | NB | 2-3F1A |
3
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Silicon NPN Epitaxial Transistor with Resistors
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| RN1443B | NB | Tos | SOT-346 |
3
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Mute, 50V, 300mA, 300mW, R1=22k, B=350..1200
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| S-8051ANR | NB | SEIKO | SOT-89 |
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电源管理ICPower Management IC/PMIC 电压检测器Supervisor
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| S-8051ANR-NB | NB | SOT-89-3 |
3
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Voltage Detector
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| SCI7711YBA | NB | SOT89-3 |
3
|
5.0V NEGATIVE DC/DC REGULATOR
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| RT1N231C | Nb | MITSUBISHI | SOT-23/SC-59 |
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三极管Bipolar Junction Transistors(BJT) 带阻尼NPNNPN Bipolar Digital Transistor (BRT)
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| RT1N231M | NB | MITSUBISHI | SOT-323/SC-70 |
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三极管Bipolar Junction Transistors(BJT) 带阻尼NPNNPN Bipolar Digital Transistor (BRT)
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| RP106K081B | NB | Ric | DFN1212-6 |
6
|
LDO, 0.8V±0.8%, 400mA, +CE
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BD49L50G-TL
|
Nb | SSOP3 |
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Standard Voltage Detectors
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| FMMTA55R | NB | SOT-23 |
3
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PNP SILICON PLANAR MEDIUM POWER TRANSISTOR
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TV06B800J-G
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NB | Cmc | DO-214AA/SMB |
2
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Vrwm=80.0V, Vbr=98.80..97.60V, Ipp=4.63A, 600W(1ms)
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| XC6120N41N | NB | Torex | SSOT-24 |
4
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4.1V±2%, N-ch, +Reset ODO
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| HN4C05JU | NB | 2-2L1A |
5
|
Dual Silicon NPN Epitaxial Planar Transistor(Common Emitter)
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DAP202U
|
NB | SOT–323 |
3
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COMMON ANODE DUAL SWITCHING DIODE
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KRC852U
|
NB | US6 |
6
|
General Purpose Transistor with Built in Bias Resistor
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| SiP21107DT-25-E3 | NB | TSOT23-5L |
5
|
150-mA Low Noise, Low Dropout Regulator
|
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BF1109WR
|
NB | SOT143B |
4
|
N-channel dual-gate MOS-FET
|
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| DRC2114E | NB | Mini3-G3-B |
3
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Silicon NPN epitaxial planar type transistor with R
|
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SMF80CA
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NB | Ers | SOD-123FL |
2
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Vrwm=80.0V, Vbr=88.80..97.60V, 1.55A, 200W(10/1000Ωs), Bidirectional
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KRC652E
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NB | TESV |
5
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General Purpose Transistor with Built in Bias Resistor
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