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Model SST111-T1-E3
Description VISHAY SST111-T1-E3 JFET Transistor, -55V, 20mA, -3V, SOT-23, JFET
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Brand: Vishay Semiconductor
Packaging SOT-23
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Packaging method Tape & Reel (TR)
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(8498) Minimum order quantity(1)
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Technical parameters/breakdown voltage: -55.0 V

Technical parameters/drain source resistance: 30.0 Ω

Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 350 mW

Technical parameters/Continuous drain current (Ids): 20.0 mA

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 350 mW

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: SOT-23

External dimensions/height: 1.02 mm

External dimensions/packaging: SOT-23

Other/Packaging Methods: Tape & Reel (TR)

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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