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Model QS6M4TR
Description Dual field-effect transistor, MOSFET, N and P channels, 1.5 A, 20 V, 0.36 ohm, 4.5 V, 1.5 V
Product QR code
Brand: ROHM Semiconductor
Packaging TSOT-23-6
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
0.72  yuan 0.72yuan
10+:
$ 0.9707
50+:
$ 0.9203
100+:
$ 0.8844
300+:
$ 0.8628
500+:
$ 0.8412
1000+:
$ 0.8197
2500+:
$ 0.7873
5000+:
$ 0.7801
Quantity
10+
50+
100+
300+
500+
Price
$0.9707
$0.9203
$0.8844
$0.8628
$0.8412
Price $ 0.9707 $ 0.9203 $ 0.8844 $ 0.8628 $ 0.8412
Start batch production 10+ 50+ 100+ 300+ 500+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(7959) Minimum order quantity(10)
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Technical parameters/rated current: 1.50 A

Technical parameters/number of pins: 6

Technical parameters/drain source resistance: 0.36 Ω

Technical parameters/polarity: N-Channel, P-Channel

Technical parameters/dissipated power: 1.25 W

Technical parameters/threshold voltage: 1.5 V

Technical parameters/drain source voltage (Vds): 30V, 20V

Technical parameters/Continuous drain current (Ids): 1.50 A

Technical parameters/rise time: 12.0 ns

Technical parameters/Input capacitance (Ciss): 80pF @10V(Vds)

Technical parameters/rated power (Max): 1.25 W

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 1250 mW

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 6

Encapsulation parameters/Encapsulation: TSOT-23-6

External dimensions/height: 0.95 mm

External dimensions/packaging: TSOT-23-6

Physical parameters/materials: Silicon

Physical parameters/operating temperature: 150℃ (TJ)

Other/Product Lifecycle: Active

Other/Packaging Methods: Tape & Reel (TR)

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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