Technical parameters/rated voltage (DC): 1.00 kV
Technical parameters/rated current: 3.00 A
Technical parameters/capacitors: 60.0 pF
Technical parameters/output current: ≤3.00 A
Technical parameters/forward voltage: 1.2 V
Technical parameters/polarity: Standard
Technical parameters/thermal resistance: 10℃/W (RθJL)
Technical parameters/forward current: 3 A
Technical parameters/forward voltage (Max): 1.2V @3A
Technical parameters/forward current (Max): 3 A
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 2600 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: DO-214AB
External dimensions/length: 7.11 mm
External dimensions/width: 6.22 mm
External dimensions/height: 2.62 mm
External dimensions/packaging: DO-214AB
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
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YONGYUTAI | 类似代替 | SMB |
DIODE GEN PURP 1kV 3A DO214AB
|
||
|
|
LiteOn | 类似代替 | SMC |
DIODE GEN PURP 1kV 3A DO214AB
|
||
S3M
|
MDD | 类似代替 | DO-214AB |
DIODE GEN PURP 1kV 3A DO214AB
|
||
S3M
|
Taiwan Semiconductor | 类似代替 | DO-214AB-2 |
DIODE GEN PURP 1kV 3A DO214AB
|
||
S3M
|
DC Components | 类似代替 |
DIODE GEN PURP 1kV 3A DO214AB
|
|||
S3M
|
Surge | 类似代替 | DO-214AB |
DIODE GEN PURP 1kV 3A DO214AB
|
||
S3M
|
Multicomp | 类似代替 | SMD |
DIODE GEN PURP 1kV 3A DO214AB
|
||
S3M
|
Micro Commercial Components | 类似代替 | DO-214AB |
DIODE GEN PURP 1kV 3A DO214AB
|
||
S3M-E3/57T
|
VISHAY | 功能相似 | DO-214AB |
VISHAY S3M-E3/57T 快速/超快功率二极管, 单, 1 kV, 3 A, 1.15 V, 2.5 µs, 100 A
|
||
S3M-E3/57T
|
Vishay Semiconductor | 功能相似 | DO-214AB |
VISHAY S3M-E3/57T 快速/超快功率二极管, 单, 1 kV, 3 A, 1.15 V, 2.5 µs, 100 A
|
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