Technical parameters/breakdown voltage (collector emitter): 70 V
Technical parameters/minimum current amplification factor (hFE): 40 @5A, 5V
Technical parameters/rated power (Max): 1 W
Technical parameters/operating temperature (Max): 200 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 1000 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-5
External dimensions/packaging: TO-5
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -65℃ ~ 200℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Bag
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards:
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N4150S
|
Semicoa Semiconductor | 功能相似 | TO-39 |
NPN功率硅晶体管 NPN POWER SILICON TRANSISTOR
|
||
JANTX2N4150
|
Aeroflex | 功能相似 | TO-5 |
2N4150 Series 70V 10A Through Hole NPN Power Silicon Transistor - TO-5
|
||
JANTX2N4150
|
Semicoa Semiconductor | 功能相似 | TO-5 |
2N4150 Series 70V 10A Through Hole NPN Power Silicon Transistor - TO-5
|
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