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Model BSP135 L6327
Description INFINEON BSP135 L6327 Power Field Effect Transistor, MOSFET, N-channel, 120 mA, 600 V, 25 ohm, 10 V, -1.4 V
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Brand: Infineon
Packaging SOT-223
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Packaging method Tape & Reel (TR)
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(5779) Minimum order quantity(1)
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Technical parameters/rated voltage (DC): 100 V

Technical parameters/rated current: 1.10 A

Technical parameters/number of pins: 4

Technical parameters/drain source resistance: 25 Ω

Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 1.8 W

Technical parameters/input capacitance: 146 pF

Technical parameters/gate charge: 4.90 nC

Technical parameters/drain source voltage (Vds): 600 V

Technical parameters/Continuous drain current (Ids): 120 mA

Technical parameters/rise time: 5.6 ns

Technical parameters/Input capacitance (Ciss): 146pF @25V(Vds)

Technical parameters/rated power (Max): 1.8 W

Technical parameters/descent time: 182 ns

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 1800 mW

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 4

Encapsulation parameters/Encapsulation: SOT-223

External dimensions/packaging: SOT-223

Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)

Other/Packaging Methods: Tape & Reel (TR)

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

Compliant with standards/REACH SVHC standards: No SVHC

Compliant with standard/REACH SVHC version: 2015/12/17

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