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Model BD679
Description MULTICOMP BD679 Single transistor bipolar, Darlington, NPN, 80 V, 40 W, 4 A, 750 hFE
Product QR code
Packaging TO-126
Delivery time
Packaging method
Standard packaging quantity 1
1.87  yuan 1.87yuan
5+:
$ 2.5205
25+:
$ 2.3338
50+:
$ 2.2031
100+:
$ 2.1471
500+:
$ 2.1097
2500+:
$ 2.0630
5000+:
$ 2.0444
10000+:
$ 2.0164
Quantity
5+
25+
50+
100+
500+
Price
$2.5205
$2.3338
$2.2031
$2.1471
$2.1097
Price $ 2.5205 $ 2.3338 $ 2.2031 $ 2.1471 $ 2.1097
Start batch production 5+ 25+ 50+ 100+ 500+
  • Freight charges   In stock Freight rate:$13.00
  • Quantity
    Inventory(8654) Minimum order quantity(5)
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Technical parameters/number of pins: 3

Technical parameters/polarity: NPN

Technical parameters/dissipated power: 40 W

Technical parameters/minimum current amplification factor (hFE): 750

Technical parameters/DC current gain (hFE): 750

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -55 ℃

Encapsulation parameters/installation method: Through Hole

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-126

External dimensions/packaging: TO-126

Physical parameters/operating temperature: -55℃ ~ 150℃

Compliant with standards/RoHS standards: Non-Compliant

Compliant with standards/REACH SVHC standards: No SVHC

Compliant with standard/REACH SVHC version: 2016/06/20

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
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BD679AG BD679AG ON Semiconductor 类似代替 TO-126-3
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BD679ASTU BD679ASTU ON Semiconductor 类似代替 TO-126-3
复合 NPN 晶体管,Fairchild Semiconductor ### 双极晶体管,Fairchild Semiconductor 双极性结点晶体管 (BJT) 板系列提供完整的解决方案,用于满足各种电路应用需求。 创新的封装设计用于提供最小尺寸、最高可靠性和最大热性能。
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BD679G BD679G ON Semiconductor 类似代替 TO-126-3
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