Encapsulation parameters/Encapsulation: PCP-5
External dimensions/packaging: PCP-5
Other/Transistor BJT Types TYPE: NPN
Other/BJT collector base reverse breakdown voltage V (BR) CBO Collector Base Voltage (VCBO): 30V
Other/BJT collector emitter reverse breakdown voltage V (BR) CEO Collector Electrometer Voltage (VCEO): 25V
Other/BJT collector continuous output current IC Collector Current (IC): 2A
Other/BJT cutoff frequency fT Transition Frequency (fT): 150MHz
Other/Transistor BJT DC Current Gain hFE DC Current Gain (hFE): 100mA
Other/BJT voltage drop VCE (sat) Collector Hermit Saturation Voltage: 0.18~0.4V
Other/Diode DIODE Type TYPE: Schottky Single Tube SBD Single Tube
Other/Diode DIODE Reverse Voltage VR Reverse Voltage: 30V
Other/Diode DIODE Forward Rectified Current Io Rectified Current: 700mA
Other/diode DIODE forward voltage drop VF Forward Voltage (Vf): 550mV
Other/dissipated power Pc Power Dissipation: 800mW
Other/Specification PDF: __
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