Technical parameters/operating temperature (Max): 200 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 3 W
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-213
External dimensions/packaging: TO-213
Physical parameters/materials: Silicon
Other/Product Lifecycle: Active
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: Non-Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Microsemi | 功能相似 | TO-66 |
NPN功率硅晶体管 NPN POWER SILICON TRANSISTOR
|
||
|
|
Microsemi | 功能相似 | TO-66 |
NPN功率硅晶体管 NPN POWER SILICON TRANSISTOR
|
||
JANTXV2N5660
|
Microchip | 功能相似 |
NPN功率硅晶体管 NPN POWER SILICON TRANSISTOR
|
|||
TIP110
|
Central Semiconductor | 功能相似 | TO-220-3 |
t-Npn Si- Po Darlington
|
||
|
|
UTC | 功能相似 | TO-220 |
t-Npn Si- Po Darlington
|
||
|
|
NTE Electronics | 功能相似 |
t-Npn Si- Po Darlington
|
|||
|
|
CJ | 功能相似 | TO-220-3 |
t-Npn Si- Po Darlington
|
||
TIP110
|
ST Microelectronics | 功能相似 | TO-220-3 |
t-Npn Si- Po Darlington
|
||
|
|
Poinn | 功能相似 |
t-Npn Si- Po Darlington
|
|||
TIP110
|
Fairchild | 功能相似 | TO-220-3 |
t-Npn Si- Po Darlington
|
||
TIP110
|
Luguang Electronic | 功能相似 |
t-Npn Si- Po Darlington
|
|||
TIP111
|
Central Semiconductor | 功能相似 | TO-220-3 |
t-Npn Si- Po Darlington
|
||
TIP111
|
Fairchild | 功能相似 | TO-220-3 |
t-Npn Si- Po Darlington
|
||
TIP111
|
Comset Semiconductors | 功能相似 |
t-Npn Si- Po Darlington
|
|||
TIP111
|
Luguang Electronic | 功能相似 |
t-Npn Si- Po Darlington
|
|||
|
|
Harris | 功能相似 | TO-220AB |
t-Npn Si- Po Darlington
|
||
TIP111
|
ON Semiconductor | 功能相似 | TO-220-3 |
t-Npn Si- Po Darlington
|
||
|
|
ETC | 功能相似 |
t-Npn Si- Po Darlington
|
|||
|
|
Poinn | 功能相似 |
t-Npn Si- Po Darlington
|
|||
|
|
Inchange Semiconductor | 功能相似 |
t-Npn Si- Po Darlington
|
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