Technical parameters/polarity: PNP
Technical parameters/breakdown voltage (collector emitter): 200 V
Technical parameters/maximum allowable collector current: 0.2A
Technical parameters/operating temperature (Max): 200 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 1000 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-39
External dimensions/packaging: TO-39
Physical parameters/materials: Silicon
Other/Product Lifecycle: Active
Other/Packaging Methods: Bag
Compliant with standards/RoHS standards: Non-Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Central Semiconductor | 功能相似 | TO-39 |
PNP高压硅晶体管 PNP HIGH VOLTAGE SILICON TRANSISTOR
|
||
2N4930
|
Semelab | 功能相似 | BCY |
PNP高压硅晶体管 PNP HIGH VOLTAGE SILICON TRANSISTOR
|
||
2N4930
|
Microsemi | 功能相似 | TO-39 |
PNP高压硅晶体管 PNP HIGH VOLTAGE SILICON TRANSISTOR
|
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