Technical Parameters/Voltage Wave Node: 5.00 V, 10.0 V, 15.0 V
Technical parameters/power supply voltage: 3V ~ 18V
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 16
Encapsulation parameters/Encapsulation: SOIC-16
External dimensions/packaging: SOIC-16
Physical parameters/operating temperature: -55℃ ~ 125℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Harris | 完全替代 | DIP |
TEXAS INSTRUMENTS CD4021BE 移位寄存器, 并行至串行、串行至串行, 1元件, DIP, 16 引脚, 3 V, 18 V
|
||
CD4021BE
|
TI | 完全替代 | PDIP-16 |
TEXAS INSTRUMENTS CD4021BE 移位寄存器, 并行至串行、串行至串行, 1元件, DIP, 16 引脚, 3 V, 18 V
|
||
CD4021BE
|
National Semiconductor | 完全替代 | PDIP |
TEXAS INSTRUMENTS CD4021BE 移位寄存器, 并行至串行、串行至串行, 1元件, DIP, 16 引脚, 3 V, 18 V
|
||
CD4021BE
|
Rochester | 完全替代 |
TEXAS INSTRUMENTS CD4021BE 移位寄存器, 并行至串行、串行至串行, 1元件, DIP, 16 引脚, 3 V, 18 V
|
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