Technical parameters/breakdown voltage (collector emitter): 60 V
Technical parameters/minimum current amplification factor (hFE): 1000 @3A, 3V
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: -65℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
New Jersey Semiconductor | 功能相似 |
2N 系列 350 V 2 A PNP 通孔 硅 功率晶体管 - TO-66
|
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2N6213
|
Mospec | 功能相似 |
2N 系列 350 V 2 A PNP 通孔 硅 功率晶体管 - TO-66
|
|||
2N6213
|
Microsemi | 功能相似 | TO-213 |
2N 系列 350 V 2 A PNP 通孔 硅 功率晶体管 - TO-66
|
||
2N6213
|
Central Semiconductor | 功能相似 | TO-66 |
2N 系列 350 V 2 A PNP 通孔 硅 功率晶体管 - TO-66
|
||
TIP110
|
Central Semiconductor | 功能相似 | TO-220-3 |
t-Npn Si- Po Darlington
|
||
|
|
UTC | 功能相似 | TO-220 |
t-Npn Si- Po Darlington
|
||
|
|
NTE Electronics | 功能相似 |
t-Npn Si- Po Darlington
|
|||
|
|
CJ | 功能相似 | TO-220-3 |
t-Npn Si- Po Darlington
|
||
TIP110
|
ST Microelectronics | 功能相似 | TO-220-3 |
t-Npn Si- Po Darlington
|
||
|
|
Poinn | 功能相似 |
t-Npn Si- Po Darlington
|
|||
TIP110
|
Fairchild | 功能相似 | TO-220-3 |
t-Npn Si- Po Darlington
|
||
TIP110
|
Luguang Electronic | 功能相似 |
t-Npn Si- Po Darlington
|
|||
TIP111
|
Central Semiconductor | 功能相似 | TO-220-3 |
t-Npn Si- Po Darlington
|
||
TIP111
|
Fairchild | 功能相似 | TO-220-3 |
t-Npn Si- Po Darlington
|
||
TIP111
|
Comset Semiconductors | 功能相似 |
t-Npn Si- Po Darlington
|
|||
TIP111
|
Luguang Electronic | 功能相似 |
t-Npn Si- Po Darlington
|
|||
|
|
Harris | 功能相似 | TO-220AB |
t-Npn Si- Po Darlington
|
||
TIP111
|
ON Semiconductor | 功能相似 | TO-220-3 |
t-Npn Si- Po Darlington
|
||
|
|
ETC | 功能相似 |
t-Npn Si- Po Darlington
|
|||
|
|
Poinn | 功能相似 |
t-Npn Si- Po Darlington
|
|||
|
|
Inchange Semiconductor | 功能相似 |
t-Npn Si- Po Darlington
|
|||
TIP120
|
Major Brands | 完全替代 | TO-220 |
STMICROELECTRONICS TIP120 单晶体管 双极, 达林顿, NPN, 60 V, 65 W, 5 A, 1000 hFE
|
||
TIP120
|
Rectron | 完全替代 | TO-220-3 |
STMICROELECTRONICS TIP120 单晶体管 双极, 达林顿, NPN, 60 V, 65 W, 5 A, 1000 hFE
|
||
|
|
Central Semiconductor | 完全替代 | TO-220-3 |
STMICROELECTRONICS TIP120 单晶体管 双极, 达林顿, NPN, 60 V, 65 W, 5 A, 1000 hFE
|
||
|
|
Boca Semiconductor | 完全替代 |
STMICROELECTRONICS TIP120 单晶体管 双极, 达林顿, NPN, 60 V, 65 W, 5 A, 1000 hFE
|
|||
TIP120
|
Fairchild | 完全替代 | TO-220-3 |
STMICROELECTRONICS TIP120 单晶体管 双极, 达林顿, NPN, 60 V, 65 W, 5 A, 1000 hFE
|
||
TIP120
|
TI | 完全替代 | TO-220 |
STMICROELECTRONICS TIP120 单晶体管 双极, 达林顿, NPN, 60 V, 65 W, 5 A, 1000 hFE
|
||
|
|
Motorola | 完全替代 |
STMICROELECTRONICS TIP120 单晶体管 双极, 达林顿, NPN, 60 V, 65 W, 5 A, 1000 hFE
|
|||
|
|
CJ | 完全替代 | TO-220-3 |
STMICROELECTRONICS TIP120 单晶体管 双极, 达林顿, NPN, 60 V, 65 W, 5 A, 1000 hFE
|
||
|
|
Bourns J.W. Miller | 完全替代 | TO-220 |
STMICROELECTRONICS TIP120 单晶体管 双极, 达林顿, NPN, 60 V, 65 W, 5 A, 1000 hFE
|
||
TIP120
|
ON Semiconductor | 完全替代 | TO-220-3 |
STMICROELECTRONICS TIP120 单晶体管 双极, 达林顿, NPN, 60 V, 65 W, 5 A, 1000 hFE
|
||
|
|
Inchange Semiconductor | 完全替代 |
STMICROELECTRONICS TIP120 单晶体管 双极, 达林顿, NPN, 60 V, 65 W, 5 A, 1000 hFE
|
|||
|
|
Harris | 完全替代 |
STMICROELECTRONICS TIP120 单晶体管 双极, 达林顿, NPN, 60 V, 65 W, 5 A, 1000 hFE
|
|||
TIP120
|
Diotec Semiconductor | 完全替代 | TO-220 |
STMICROELECTRONICS TIP120 单晶体管 双极, 达林顿, NPN, 60 V, 65 W, 5 A, 1000 hFE
|
||
TIP120-BP
|
Micro Commercial Components | 功能相似 | TO-220-3 |
TO-220 NPN 60V 5A
|
||
TIP120TU
|
Fairchild | 功能相似 | TO-220-3 |
NPN 晶体管,Fairchild Semiconductor ### 双极晶体管,Fairchild Semiconductor 双极性结点晶体管 (BJT) 板系列提供完整的解决方案,用于满足各种电路应用需求。 创新的封装设计用于提供最小尺寸、最高可靠性和最大热性能。
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