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Model PDTC115EE,115

Description NXP PDTC115EE,115 Single transistor bipolar, BRT, NPN, 50 V, 150 mW, 100 mA, 80 hFE

Brand: NXP

Packaging SOT-416-3

Delivery time

Packaging method Tape & Reel (TR)

Standard packaging quantity 1

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Technical parameters/number of pins:	3
Technical parameters/polarity:	NPN
Technical parameters/dissipated power:	150 mW
Technical parameters/breakdown voltage (collector emitter):	50 V
Technical parameters/Maximum allowable collector current:	20mA
Technical parameters/minimum current amplification factor (hFE):	80 @5mA, 5V
Technical parameters/rated power (Max):	150 mW
Technical parameters/DC current gain (hFE):	80
Technical parameters/operating temperature (Max):	150 ℃
Technical parameters/operating temperature (Min):	-65 ℃
Technical parameters/dissipated power (Max):	150 mW
Encapsulation parameters/installation method:	Surface Mount
Package parameters/number of pins:	3
Encapsulation parameters/Encapsulation:	SOT-416-3
Dimensions/Length:	1.8 mm
Dimensions/Width:	0.9 mm
Dimensions/Height:	0.85 mm
Dimensions/Packaging:	SOT-416-3
Other/Product Lifecycle:	Obsolete
Other/Packaging Methods:	Tape & Reel (TR)
Other/Manufacturing Applications:	Power Management, Industrial
Compliant with standards/RoHS standards:	RoHS Compliant
Compliant with standards/lead standards:	Lead Free
Compliant with the REACH SVHC standard:	No SVHC
Compliant with standard/REACH SVHC version:	2015/12/17

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