Technical parameters/test current: | 10 mA |
|
Technical parameters/voltage regulation value: | 4.7 V |
|
Technical parameters/operating temperature (Max): | 175 ℃ |
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Technical parameters/operating temperature (Min): | -65 ℃ |
|
Encapsulation parameters/installation method: | Through Hole |
|
Package parameters/number of pins: | 2 |
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Encapsulation parameters/Encapsulation: | DO-35 |
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Dimensions/Packaging: | DO-35 |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Bag |
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Compliant with standards/RoHS standards: | Non-Compliant |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Microsemi | 功能相似 | DO-35 |
DO-35 4.7V 400mW
|
||
|
|
Central Semiconductor | 功能相似 | DO-35 |
DO-35 4.7V 400mW
|
||
1N5522B
|
Jinan Gude Electronic Device | 功能相似 |
DO-35 4.7V 400mW
|
|||
|
|
New Jersey Semiconductor | 完全替代 | 2 |
400MW硅齐纳二极管 SILICON 400MW ZENER DIODES
|
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